With the rapid development of silicon carbide (SiC) in power electronics and wide-bandgap semiconductor applications, there is an increasing demand for large-size, high-quality SiC substrates. However, large substrates (such as 4-inch or 6-inch wafers) are often prohibitively expensive for laboratory research and educational purposes. In this context, 1-inch 4H-N type silicon carbide substrates are an ideal choice due to their small size and cost-effectiveness.

Cost Advantage: Lowering the Barrier for Experimental Research

Large-size SiC substrates can cost several thousand to tens of thousands of dollars per wafer, making early-stage exploration and process verification financially challenging. In contrast, 1-inch small-size substrates are significantly more affordable, allowing researchers to optimize processes and explore parameters with minimal financial risk. This reduces potential material loss when transitioning to larger substrates.

Laboratory Research: The First Step in Material and Device Exploration

1-inch SiC substrates are widely used in research for various purposes:

Epitaxial Growth Research: Suitable for initial growth experiments of GaN or SiC epitaxial layers, enabling researchers to optimize atmosphere, temperature, and doping parameters.

Device Prototype Verification: Small substrates can be used to fabricate prototype diodes, MOSFETs, or Schottky devices, testing key parameters such as breakdown voltage, carrier concentration, and resistivity.

Material Characterization: Small substrates allow analysis of surface roughness, defect density (e.g., threading dislocations, micropipes), and crystal orientation effects, providing data to guide subsequent large-scale processes.

Process Verification: Conserving Resources and Reducing Risk

In the development of new processes or equipment, small-size substrates offer distinct advantages:

Process Development: They serve as test pieces for thin-film deposition, etching, polishing, ion implantation, and other process steps, minimizing material waste.

Equipment Calibration: During the setup of MOCVD, ion implantation, or CMP equipment, 1-inch substrates can be used for initial runs to ensure process parameters are stable and reliable.

Reliability Experiments: Suitable for preliminary thermal treatments, annealing, and interface property studies, helping to evaluate the feasibility of materials and processes.

Educational Demonstration: A Cost-Effective Platform for Learning

In universities and research institutes, 1-inch SiC substrates have become standard teaching materials:

Educational Use: Demonstrating semiconductor processes and SiC’s high hardness, thermal conductivity, and wide bandgap properties.

Practical Training: Students can perform cutting, cleaning, photolithography, and etching experiments on small substrates, gaining hands-on experience while controlling costs.

Research Initiation: Provides beginners with tangible materials, facilitating understanding of SiC applications in power devices.

Conclusion

In summary, 1-inch 4H-N type silicon carbide substrates offer unique value in research, process verification, and education due to their small size and cost-effectiveness. They are the preferred choice for laboratories conducting material and device studies, essential for developing new processes and educational experiments. They serve as a high-value experimental platform bridging laboratory research and industrial applications, contributing to the advancement of SiC technology.